unisonic technologies co., ltd 2n7002zw preliminary power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2011 unisonic technologies co., ltd qw-r502-539.a 300m amps, 60 volts dual n-channel enhancement mode mosfet ? description the utc 2n7002zw uses advanced technology to provide excellent r ds(on) , low gate charge and low gate voltages during operation. this device is suitable for use as a load switch or in pwm applications. ? features * low reverse transfer capacitance (c rss = typical 3.0 pf) * esd protected * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 2.gate 1.sourc e 3.drai n ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 2n7002zwl-al3-r 2N7002ZWG-AL3-R sot-323 s g d tape reel ? marking
2n7002zw preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-539.a ? absolute maximum ratings (t a = 25 c) parameter symbol ratings unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v continuous 300 drain current pulse(note 2) i d 800 ma 200 mw power dissipation derating above t a =25c p d 1.6 mw/c junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. ? electrical characteristics (t a =25c) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =10a 60 v drain-source leakage current i dss v ds =60v, v gs =0v 1.0 a gate-source leakage current i gss v ds =0v, v gs =20v 10 a on characteristics gate threshold voltage v gs(th) v ds =10v, i d =1ma 1.0 1.85 2.5 v v gs =10v, i d =0.5a, t j =125c 13.5 static drain-source on-resistance (note) r ds(on) v gs =5v, i d =0.05a 7.5 ? dynamic parameters input capacitance c iss 25 50 pf output capacitance c oss 10 25 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0mhz 3.0 5.0 pf switching parameters turn-on delay time t d(on) 12 20 ns turn-off delay time t d(off) i d =0.2 a, v dd =30v, v gs =10v, r l =150 ? , r g =10 ? 20 30 ns drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs =0v, is=115ma (note ) 0.88 1.5 v maximum pulsed drain-source diode forward current i sm 0.8 a maximum continuous drain-source diode forward current is 115 ma note: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch. minimum land pad size. 2. pulse width Q 300 s, duty cycle Q 1%
2n7002zw preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-539.a ? test circuits and waveforms fig. 2a switching test circuit fig. 2b switching waveforms utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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